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Gupta, Brindaban Modak, Debarati Das, Ashok Kumar Yadav, Pampa Modak, Anil K. 1200 1000 800 600 400 200 0 Binding Energy (eV) In 3d Sn 3d. Sample Sn/Ti atomic ratios BET SSA d E g (eV) Nominal a ICP-AES b XPS SAT c m2/g H-titanate 38 3.26 anatase TiO 2 63 3.18 SnTi-A 0.14 0.10 0.
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Flexible Photodetectors with High Responsivity and Broad Spectral Response Employing Ternary SnxCd1–xS Micronanostructures. Table S2 Photocatalyst characteristics: Sn/Ti nominal atomic ratio, Sn/Ti bulk atomic ratio from ICP-AES, Sn/Ti surface atomic ratio from XPS, BET specific surface area, Eg band gap. The effects of Sn incorporation on morphological, structural and optical properties of ZnO films were investigated. Muhammad Zubair Nawaz, Liu Xu, Xing Zhou, Khizar Hussain Shah, Muhammad Yaqub, Jiale Wang, Binhe Wu, Chunrui Wang. In this work, Undoped Zinc Oxide (ZnO) and Sndoped Zinc Oxide (ZnO:Sn) films have been deposited by sol-gel dip coating method, where the Sn/Zn atomic ratio was 3 and 5 in the solution.The results would provide a way to get temperature tunable low threshold microscale lasers and study the plasma-polariton process within a microcavity. Second order features of the XPS spectra (d) worth pointing out are: peaks. For these reasons, the band-edge and in-gap emission both can realize lasing excited by a continuous laser at 80 K. intensity ratio between the two peaks depends only on the angular momentum 1. This significant enhancement of the in-gap emission may be attributed to the local plasma coming from more bound carriers and enhanced microcavity effect at low temperature by analyzing the temperature-dependent PL and Raman spectra in detail. The ratio of the intensity of the in-gap emission versus that of the band-edge emission is only 1/4 at room temperature, but it can be remarkably increased to about 7 at 80 K.
#SN XPS PEAK RATIO SERIES#
Its room-temperature photoluminescence (PL) spectrum shows a broad in-gap emission band out of different Sn dopants which is also superposed by a series of weak modes from a microcavity due to the wire size and its structure, besides the CdS band-edge emission and a side-band emission due to SnS 2. Sn-doped CdS nanowires, with the inside coexisting Sn(II)S, Sn 2(III)S 3, and Sn(IV)S 2 identified by in situ Raman and XPS spectra, are grown via a simple thermal evaporation deposition technique.